TP65H070LSG-TR

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Številka dela
TP65H070LSG-TR
Proizvajalec
Transphorm
Kategorije
RF JFET Transistors
RoHS
Podatkovni list
Opis
RF JFET Transistors GAN FET 650V 25A PQFN88

Specifikacije

Proizvajalec
Transphorm
Kategorije
RF JFET Transistors
Id - Continuous Drain Current
25 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
PQFN-8
Packaging
Cut Tape, Reel
Pd - Power Dissipation
96 W
Technology
GaN
Transistor Polarity
N-Channel
Transistor Type
HEMT
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Breakdown Voltage
- 20 V, + 20 V

Najnovejše ocene

packed pretty good, all is ok,-seller.

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!

Great product. Arrived ahead of time. Thank you

Osebe, ki so si ogledale TP65H070LSG-TR, so nato kupile

Sorodne ključne besede za TP65

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