Številka dela G3R20MT17N Proizvajalec GeneSiC Semiconductor Kategorije MOSFET RoHS Podatkovni list G3R20MT17N Opis MOSFET 1700V 20mO SOT-227 G3R SiC MOSFET
Proizvajalec GeneSiC Semiconductor Kategorije MOSFET Channel Mode Enhancement Id - Continuous Drain Current 92 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-227 Packaging Tube Pd - Power Dissipation 476 W Qg - Gate Charge 256 nC Rds On - Drain-Source Resistance 20 mOhms Technology SiC Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 1.7 kV Vgs - Gate-Source Voltage - 5 V, + 15 V Vgs th - Gate-Source Threshold Voltage 2.7 V