Številka dela RU1C002ZPTCL Proizvajalec ROHM Semiconductor Kategorije MOSFET RoHS Podatkovni list RU1C002ZPTCL Opis MOSFET 4V Drive Pch MOSFET Drive Pch
Proizvajalec ROHM Semiconductor Kategorije MOSFET Channel Mode Enhancement Id - Continuous Drain Current 200 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-323-3 Packaging Cut Tape, Reel Pd - Power Dissipation 150 mW Qg - Gate Charge 1.4 nC Rds On - Drain-Source Resistance 1.2 Ohms Technology SI Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage - 10 V, + 10 V Vgs th - Gate-Source Threshold Voltage 300 mV