RQ3E100MNTB1

Slike so samo za referenco
Številka dela
RQ3E100MNTB1
Proizvajalec
ROHM Semiconductor
Kategorije
MOSFET
RoHS
Podatkovni list
Opis
MOSFET 4.5V Drive Nch MOSFET

Specifikacije

Proizvajalec
ROHM Semiconductor
Kategorije
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
10 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
-
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Cut Tape, MouseReel, Reel
Pd - Power Dissipation
2 W
Qg - Gate Charge
9.9 nC
Rds On - Drain-Source Resistance
8.8 mOhms
Technology
SI
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

Najnovejše ocene

Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!

Everything is excellent! recommend this seller!

fast delivery

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Osebe, ki so si ogledale RQ3E100MNTB1, so nato kupile

Sorodne ključne besede za RQ3E

  • RQ3E100MNTB1 Integrirano
  • RQ3E100MNTB1 RoHS
  • RQ3E100MNTB1 PDF Datasheet
  • RQ3E100MNTB1 Podatkovni list
  • RQ3E100MNTB1 Del 1. \ T
  • RQ3E100MNTB1 Nakup
  • RQ3E100MNTB1 Distributer
  • RQ3E100MNTB1 PDF
  • RQ3E100MNTB1 Komponenta
  • RQ3E100MNTB1 IC
  • RQ3E100MNTB1 Prenesite PDF
  • RQ3E100MNTB1 Prenesite podatkovni list
  • RQ3E100MNTB1 Dobava
  • RQ3E100MNTB1 Dobavitelj
  • RQ3E100MNTB1 Cena
  • RQ3E100MNTB1 Podatkovni list
  • RQ3E100MNTB1 Slika
  • RQ3E100MNTB1 Slika
  • RQ3E100MNTB1 Inventar
  • RQ3E100MNTB1 Zaloga
  • RQ3E100MNTB1 Izvirnik
  • RQ3E100MNTB1 Najcenejši
  • RQ3E100MNTB1 Odlično
  • RQ3E100MNTB1 Brez svinca
  • RQ3E100MNTB1 Specifikacija
  • RQ3E100MNTB1 Vroče ponudbe
  • RQ3E100MNTB1 Cena prekinitve
  • RQ3E100MNTB1 Tehnični podatki