Številka dela RQ3L050GNTB Proizvajalec ROHM Semiconductor Kategorije MOSFET RoHS Podatkovni list RQ3L050GNTB Opis MOSFET Nch 60V 12A Si MOSFET
Proizvajalec ROHM Semiconductor Kategorije MOSFET Channel Mode Enhancement Id - Continuous Drain Current 12 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case HSMT-8 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 14.8 W Qg - Gate Charge 5.3 nC Rds On - Drain-Source Resistance 43 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V