Številka dela TN0604N3-G-P013 Proizvajalec Microchip Technology Kategorije MOSFET RoHS Podatkovni list TN0604N3-G-P013 Opis MOSFET N-CH Enhancmnt Mode MOSFET
Proizvajalec Microchip Technology Kategorije MOSFET Channel Mode Enhancement Id - Continuous Drain Current 7 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-92-3 Packaging Ammo Pack Pd - Power Dissipation 740 mW Qg - Gate Charge - Rds On - Drain-Source Resistance 1.6 Ohms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 600 mV