Številka dela RU1J002YNTCL Proizvajalec ROHM Semiconductor Kategorije MOSFET RoHS Podatkovni list RU1J002YNTCL Opis MOSFET 0.9V Drive Nch MOSFET
Proizvajalec ROHM Semiconductor Kategorije MOSFET Channel Mode Enhancement Id - Continuous Drain Current 200 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-323-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 150 mW Qg - Gate Charge - Rds On - Drain-Source Resistance 2.2 Ohms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 50 V Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 300 mV