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ADG1201 Low Capacitance, Low Charge Injection, ±15 V/+12 V iCMOS SPST in SOT-23

02/21/2023

Product Details

The ADG1201 is a monolithic complementary metal-oxide semiconductor (CMOS) device containing a single-pole, single-throw (SPST) switch designed in an iCMOS® process. iCMOS is a modular manufacturing process combining a high voltage CMOS and bipolar technologies. iCMOS enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no previous generation of high voltage devices has been able to achieve. Unlike analog ICs using conventional CMOS processes, iCMOS components can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and reduced package size.

The ultralow capacitance and charge injection of this switch makes it an ideal solution for data acquisition and sample-and-hold applications, where low glitch and fast settling are required. Fast switching speed coupled with high signal bandwidth also makes the device suitable for video signal switching.

iCMOS construction ensures ultra low power dissipation, making the device ideally suited for portable and batterypowered instruments.

The ADG1201 contains a SPST switch. Figure 1 shows that with a logic input of 1, the switch of the ADG1201 is closed. The switch conducts equally well in both directions when on and has an input signal range that extends to the supplies. In the off condition, signal levels up to the supplies are blocked.

Product Highlights

  1. Ultralow capacitance.
  2. <1 pC charge injection.
  3. Ultralow leakage.
  4. 3 V logic-compatible digital inputs: VINH = 2.0 V minimum, VINL = 0.8 V maximum.
  5. No logic voltage (VL) power supply required.
  6. SOT-23 package.

Applications

  • Automatic test equipment
  • Data acquisition systems
  • Battery-powered systems
  • Sample-and-hold systems
  • Audio signal routing
  • Video signal routing
  • Communication systems


Features and Benefits

  • 2.4 pF typical off switch source capacitance, dual supply
  • <1 pC charge injection
  • Low leakage: 0.6 nA maximum at 85°C
  • 120 Ω typical on resistance at 25°C, dual supply
  • Fully specified at ±15 V, +12 V
  • No VL supply required
  • 3 V logic-compatible inputs
    • VINH = 2.0 V minimum
    • VINL = 0.8 V maximum
  • Rail-to-rail operation
  • 6-lead SOT-23 package